Ph.D,     Electrical Engineering, NORTH CAROLINA STATE UNIVERSITY, RALEIGH., USA (1997),
Advisor:  Prof. B. Jayant Baliga

“M.Tech,  Electrical Engineering, Indian Institute of Technology(IIT), Madras, India. (1993)

Founder and  Chief  Consultant,  Power  Device  Technology  (2009-Present).

Sr. Manager & Head, Device Technology Center, Vishay Siliconix, Pune, India (2007-2009).

 Senior  Engineering  Manager,  Device  Concepts  &  New  Product  Development,  Fairchild Semiconductor, Mountaintop, PA, USA (2005-2007). Fairchild award for SiC Schottky diode technology development and Trench NPT IGBT (2006)

 Principal  Engineer,  Worldwide  HV  device  design  &  Manager,  Failure  analysis,  Fairchild Semiconductor, Mountaintop, PA, USA (2004-2005).

Group Leader, AC/DC Team, Intersil/Fairchild Semiconductor, Mountaintop, PA, USA (2000-2004). He was awarded “Fairchild’s elite Key Technologist” Award, 2001-2004

Staff Engineer, Intersil/Harris Semiconductor, Mountaintop, PA, USA (1997-2000).

Harris performance award- SMPS IGBT development team award, 1999.

Research Assistant, Power Semiconductor Research Center, NCSU, USA (1993-1997).

“Static Induction Transistors Having Heterojunction Gates and Methods of Forming Same” US Patent 5,753,938  Issued on May 19, 1998.

“Edge termination for silicon power devices” US Patent 6,242,784 issued June 5, 2001.

“Trench MOFET with reduced miller capacitance” US Patent 6,573,560 issued June 3, 2003.

“Edge termination for silicon power devices” US Patent 6,534,347 issued March 18, 2003.

“A Quick Punch Through (QPT) IGBT designed to provide gate controllable di/dt and reduced EMI during inductive turn-off” US Patent 6,831,329 issued Dec 14 2004

“Edge termination for silicon power devices” US Patent 6,362,026 issued March 26, 2002.

“Technique for forming emitter ballast resistors in IGBTs and using the enhanced body effect to maximize short-circuit ruggedness” US Patent 6,437,419 issued August 20, 2002.

“Soft recovery power diode” US Patent 6,737,731 issued May 18 2004.

“Edge termination for silicon power devices” US Patent 6,759,719 issued July 6, 2004.

“Edge termination for silicon power devices” US Patent 7,166,866 issued January 23, 2007.

“Schottky diode structure to reduce capacitance and switching losses and method of making same” US Patent 7,199,442 issued April 3, 2007.

“MOS-gated transistor with reduced Miller capacitance” US Patent 7,265,415 issued September 4,2007.

“Schottky diode structure to reduce capacitance and switching losses and method of making same” US Patent 7,468,314 issued December 23, 2008.

“Method of making a MOS-gated transistor with reduced miller capacitance”, US Patent 7,534,683 issued May 19, 2009.

“Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device” US Patent 7,586,156 issued September 8,2009.

“Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device” US Patent 7,859,057 issued December 28,2010.

“Structure and method for forming accumulation-mode field effect transistor with improved current capability” US Patent 7,936,008 issued May 3, 2011.

Superjunction structures for power devices and methods of manufacture” filed September 2008.

Two more applications/divisions pending.

Filed 4 invention disclosures on the new trench based Super Junction devices.

P.M Shenoy, A.Moki, B.J.Baliga, D.Alok, K.Wongchotigul, and M.Spencer, “Vertical Schottky barrier diodes on 3C-SiC grown on Si,”  presented at IEDM, San Francisco, December 1994.

A.Moki,  P.M.Shenoy, D.Alok,   B.J.Baliga, K.Wongchotigul,  and M.Spencer,    “Low  resistivity as-deposited ohmic  contacts to 3C-SiC,”  Journal of Electronic Materials, vol. 24, No. 4, 1995.

P.M.Shenoy  and B.J.Baliga,  “Planar,  Ion  Implanted, High Voltage 6H-SiC P-N Junction Diodes,”    IEEE Electron Device Lett., Vol. 16, No. 10, 1995.

P.M.Shenoy  and  B.J.Baliga,  “Planar,  high  voltage,  boron  implanted  6H-SiC  P-N  junction  diodes,”  presented  at ICSCRM, Kyoto (Japan), September 1995.

P.M.Shenoy and B.J.Baliga, “High Voltage P+ Polysilicon/N- 6H-SiC Heterojunction Diodes,” Electronic Letters, Vol.33, No.12, June 1997.

P.M.Shenoy,  V.Bantval, M.Kothandaraman  and  B.J.Baliga,  “  A  Novel  P+  Polysilicon/N-  6H-SiC  Heterojunction Trench Gate Vertical FET,” presented at ISPSD, Weimar (Germany), May 1997.

P.M.Shenoy  and  B.J.Baliga,  “High  Voltage  Planar  6H-SiC  ACCUFET,”  presented  at  ICSCIII-N’97,  Stockholm, Sweden, Sept.’97.

P.M.Shenoy  and B.J.Baliga,    “The Planar 6H-SiC ACCUFET: A New High-Voltage Power MOSFET Structure,” IEEE Electron Device Lett., Vol.18 , No. 12, 1997

R.K.Chilukuri,  P.M.Shenoy  and  B.J.Baliga,  “Comparison  of  6H-SiC  and  4H-SiC  High-Voltage  Planar ACCUFETs,” presented at ISPSD, Kyoto (Japan), June 1998.

G.M.Dolny  etal  “Static  and  Dynamic  Characterization  of  Large-Area  High  Current  Density  SiC  Schottky Diodes,” presented at Device Research Conference, June 1998.

R.K.Chilukuri, P.M.Shenoy and B.J.Baliga, “High Temperature Operation of SiC Planar ACCUFET” presented at the Industrial Application Society Conference, Oct 1998.

P.M.Shenoy  and  B.J.Baliga,  “Analysis  and  Optimization  of  the  Planar  6H-SiC  ACCUFET  “  Solid  State Electronics, Vol.43, pp.213-220, January 1999.

P.M.Shenoy etal “Analysis of the Effect of Charge Imbalance on the Static and Dynamic Characteristics of the Super Junction MOSFET,” presented at ISPSD, Toronto, May 1999.

S.Shekhawat etal “Harris New Generation SMPS IGBT Opens Door for a New Era in SMPS Market”, presented at PCIM conference, Germany, June 1999.

A.H.Craig etal “SMPS IGBT Demonstrates Superior Performance Compared to MOSFETs in Various Switch Mode Power Supply Applications”, presented at PCIM conference, USA.

S.Shekhawat  etal “UIS-rated SMPS  IGBT opens door  for a new SMPS era” presented at PCIM Europe,  June 2000.

P.M.Shenoy etal “High performance 300V IGBT”, presented at ISPSD, Toulouse, France, May 2000.

J.Yedinak etal  “Optimizing 600V Punchthrough IGBTs for Unclamped Inductive Switching (UIS)” , presented at ISPSD, Toulouse, France, May 2000.

S.Shekhawat  etal  “Intersil’s New  Stealth Diode  Improves SMPS  IGBT Switching Speed”, presented  at PCIM conference, Boston, MA, Oct. 2000

S.Shekhawat  etal  “Stealth  Diode  Cuts  SMPS  IGBT  Switching  Loss-Quietly”  published  in  PCIM magazine, October 2000.

P.M.Shenoy  etal  “Intersil  SMPS  II  IGBTs  offer  high  UIS  rating,  low  gate  charge  and  low  turn-on  loss” presented at PCIM conference, Europe, June 2001.

P.M.Shenoy  etal “The  Influence of Body Effect on  the Short-circuit Ruggedness of Emitter Ballasted  IGBTs” presented at ISPSD, Osaka, Japan, June 2001.

D.T.Morisette etal,  IEEE Trans. Electron Devices, Vol. 48, 349 (2001)

S.Shekhawat etal “New Stealth Soft Recovery Diode Reduces SMPS-IGBT Switching Loss” presented at PCIM conference, Europe, June 2001.

J.Yedinak etal, “Enhanced IGBT Self Clamped Inductive Switching (SCIS) Capability through Vertical Doping Profile and Cell Optimization” presented at ISPSD, SantaFe New Mexico, June 2002.

S.Shekhawat  etal  “SMPS  IGBT  and  new  FRFET  improves  the  reliability  of  Phase-Shifted  ZVS  PWM  Full Bridge DC/DC Converter”  presented at PCIM conference, Europe, June 2002.

P.M.Shenoy  etal  “Soft  Recovery  Diode  with  Low  Reverse  Recovery  Current”  presented  at  IBM  Power Technology Symposium, Minneapolis, Minnesota, September 2002.

S.Shekhawat etal “Stealth Diode and SMPS MOSFET Helps in Controlling EMI in Power Supplies” published in Conformity magazine, September 2002.

S.Shekhawat  etal  “New FRFET  Increases  the Reliability of Phase-Shifted ZVS PWM Full Bridge Converter” published in power systems design magazine, February 2004.

P.M.Shenoy etal “Fairchild’s New NPT 2  IGBT Opens Door  for a New Era  in UPS, Motor Drive and SMPS Market” presented at Power Systems World, Chicago, November 2004.

S.Shekhawat  etal  “Stealth  Diode  and  UniFET  Reduces  EMI  in  Power  Supplies”  to  be  published  in  Power Electronics in Europe magazine, January 2005.

S.Shekhawat etal “Highly Optimized Planar UNIFET Competes with Super-Junction MOSFET at 500V Level in PFC and Zero Voltage Switching DC/DC Applications” presented at PCIM China, March 2005.

J.Shovlin  etal  “Silicon  Carbide:  Barriers  to  Manufacturable  Devices”  presented  at  ASMC  conference, Munich,Germany, April 2005.

P.M.Shenoy  etal  “Application Specific 1200V Planar and Trench  IGBTs” presented at APEC, Dallas, March 2006.

P.M.Shenoy  etal “Reverse Recovery Evaluation of Conventional and Super Junction MOSFET Body Diodes” presented at PCIM, China, March 2006.

S.Shekhawat  etal  “Evaluation  of  Non  Punch  Through  IGBT  Technologies  for  Soft  and  Hard  Switching Applications” presented at PCIM, Germany, May 2006.

S.Shekhawat  etal  “  A Fast Body Diode UNIFET Analyzed  and  tested Under  Zero Voltage  Switching”  to  be published in Bodo’s Power systems, November 2006

P.M.Shenoy  etal  “Super  Junction MOSFET  with  Robust  Body  Diode”  presented  at  Power  Systems World, October 2006.

P.M.Shenoy etal “Low Qgd 200  to 250V UltraFET Trench MOSFETs with  low Trr and Qrr  for Synchronous Rectification, AC/DC and DC/DC applications”  presented at PCIM, China, March 2007.

P.M.Shenoy  “High  Voltage  Superjunction  Technology  Development  Trends”    an  invited  paper  presented  at IWPSD, India, December, 2011.